Modeling n-p-junction is an urgent task, because theoretical models do not describe all the properties of semiconductor structures with different content of impurities. The influence of impurities on the properties of a sharp asymmetric n-p-junction was analyzed in the article. The Poisson equation in the space charge region (SCR) of the equilibrium n-p-junction was solved numerically. The electrical potential and charge density in the SCR were calculated. It is shown that the structure of SCR of sharp, highly asymmetric n-p-junction substantially differs from the model of depleted charge carriers, and includes four parts: 1 - highly doped region, wherein the main charge carriers partially compensate the charge of the ionized impurities; 2 - lowly doped region, which riched of charge carriers, that increase the charge of the ionized impurities; 3 - lowly doped region, wherein the concentrations of electrons and holes much less then the concentration of ionized impurities; 4 - lowly doped region, wherein the main charge carriers partially compensate the charge of the ionized impurities.

Уравнение Пуассона для полупроводника в равновесном состоянии решено численно. Рассчитаны электрический потенциал и плотность заряда в области пространственного заряда (ОПЗ) резкого несимметричного n-p-перехода. Показано, что структура ОПЗ резкого сильно несимметричного n-p-перехода существенно отличается от модели области, обеднённой носителями заряда, так как содержит слой, обогащенный носителями заряда.