In this paper nanocrystalline silicon powder has been considered. It has been produced in the inert gas atmosphere at the temperature of 8000°-12000 °C by plasma synthesis. This material consists of silicon microparticles with nanocrystals on their surface. The size of nanocrystals was in the range of 8-200 nm. For the electrical characteristics of the nanosilicon the special installation, which is able to change the pressure force on the powder, was made. The conductivity of the nc-Si increases exponentially with increasing temperature. The presented activation energies, according to the applied pressure to nanocrystalline silicon powder, showed growth. With the increase in the pressure force it can be seen a significant increase in current from the current-voltage characteristics which were the straight lines. This effect is due to strong enough porosity of the investigated material. The activation energies were at tenths-hundredths of electron volts. Resistivities varied greatly from the procedures for the preparation of powders and were 0.022-4500 ohm$\cdot$ cm. The explanation of silicon nanopowder conductivity has been presented. The obtained material has a high sensitivity to external influences, and its properties can be used to create some devices, such as sensors, detectors etc. Diffusion, saturation concentration, activation energy, diffusion coefficient, concentration profile, depth of location of p-n junction.

Рассмотрены электрические характеристики наноструктурированного порошкового кремния, полученного методом плазмохимического синтеза при температуре 8000°-12000 °C: температурные зависимости проводимости, энергии активации, ВАХ при разном давлении, прикладываемом к порошку.