Growing GaInAsSb/GaSb heterostructures with an array of InSb nanoclusters for photovoltaic converters in the spectral range 800 ≤ λ ≤ 6800 nm
UDC
538.958DOI:
https://doi.org/10.31429/vestnik-21-3-84-89Abstract
The work describes the process of producing cascade thermophotovoltaic (TPV) converters based on a GaInAsSb solid solution grown on a gallium antimonide substrate. A feature of this solid solution is a wide range of immiscibility, which limits their composition and, as a consequence, the range of wavelengths accepted by TPV converters. However, it is possible to expand the stability region of the GaInAsSb solid solution, as well as increase the efficiency of photoconversion due to the absorption of long-wavelength micron photons λ >2.48 μm, by growing ordered InSb nanoclusters on the surface of the sample. As a result of the study, it was noticed that the surface morphology depends on the deposition time of the InSb growth material. The height of nanoclusters is influenced by the crystallization time, the temperature of the growth process and the temperature gradient. Thus, the height of nanoclusters increases linearly with crystallization time and temperature gradient, and increases exponentially with increasing temperature. Thus, the optimal deposition time is 8 minutes. In addition, the photoluminescence spectrum of the Ga0.90In0.10As0.15Sb0.85/GaSb heterostructure was obtained. It shows two peaks caused by radiative recombination in the GaInAsSb layer and InSb nanoclusters. The spectral dependence of the photosensitivity of the heterosystem shows that the wavelength range is in the range 800–6800 nm.
Keywords:
zone recrystallization, nanoclusters, heterostructures, photoluminescence, spectral sensitivityAcknowledgement
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