Gauge theory of dislocations distribution

Authors

  • Bogatov N.M. Kuban State University, Krasnodar, Российская Федерация
  • Savchenko A.P. Kuban State University, Krasnodar, Российская Федерация

UDC

548.55

Abstract

The macroscopic distribution of dislocations in the bulk of a crystal has been studied theoretically. The model of a rectangular crystal with cubic symmetry has been considered. The application of the gauge theory of structural defects has made it possible to solve the problem of dislocations distribution along the Y-axis for symmetric boundary conditions. Solutions of the following types have been found: periodical, decaying, and decaying with oscillations. The characteristic length of the motion for dislocations in silicon has been calculated.

Author Infos

Nikolay M. Bogatov

д-р физ.-мат. наук, профессор, заведующий кафедрой общей физики и информационных систем физико-технического факультета Кубанского государственного университета

e-mail: bogatov@phys.kubsu.ru

Andrey P. Savchenko

аспирант Кубанского государственного университета

References

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Issue

2004. No. 1

Section

Physics

Pages

76-81

Submitted

2003-02-11

Published

2004-03-30

How to Cite

Bogatov N.M., Savchenko A.P. Gauge theory of dislocations distribution. Ecological Bulletin of Research Centers of the Black Sea Economic Cooperation, 2004, no. 1, pp. 76-81. (In Russian)

Copyright (c) 2004 Bogatov N.M., Savchenko A.P.

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