Gauge theory of dislocations distribution
UDC
548.55Abstract
The macroscopic distribution of dislocations in the bulk of a crystal has been studied theoretically. The model of a rectangular crystal with cubic symmetry has been considered. The application of the gauge theory of structural defects has made it possible to solve the problem of dislocations distribution along the Y-axis for symmetric boundary conditions. Solutions of the following types have been found: periodical, decaying, and decaying with oscillations. The characteristic length of the motion for dislocations in silicon has been calculated.
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Copyright (c) 2004 Bogatov N.M., Savchenko A.P.
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