Behavior peculiarities of resistivity in thin films of bismuth doped with tellurium
UDC
538.975DOI:
https://doi.org/10.31429/vestnik-18-1-55-62Abstract
In this article, the results of complex experimental investigation of the temperature dependences of the resistivity in thin tellurium-doped bismuth films in the impurity range of 0.005-0.15 at. %, thicknesses range of 0.06-1.1 μm and in the temperature range of 77-300 K are presented. A shift of the characteristic minimum towards high temperatures for films Bi99,995Te0,005 and Bi99,99Te0,01 was discovered on the temperature dependence of the resistivity due to the decrease in the mean free path of charge carriers. The saturation on the temperature dependence of the resistivity at temperatures below 125 K for films Bi99,95Te0,05 was discovered, but for films Bi99,9Te0,1 a characteristic maximum was observed on the temperature dependence, which shifts to high temperatures with increasing film thickness. The behavior of the temperature dependence of the resistivity of these films is due to the contribution of both L-electrons in the conduction band and T-holes in the valence band in the framework of the two-band model. The characteristic "metallic form" of the temperature dependence of the resistivity of Bi99,85Te0,15 films and single crystals is associated with the predominant contribution of the one-band model of L-electrons to the values of the resistivity coefficients. The results obtained can be widely used for the manufacture of thin-film bolometers, the temperature coefficient of resistance (TCR) of which can be significantly improved by appropriate doping with donor impurities, such as the tellurium.
Keywords:
bismuth, tellurium, impurity, alloying, thin films, resistivity, magnetic fieldReferences
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