Photovoltaic characteristics of n–InAs/n–GaInPSbAs/p–GaInPSbAs thermophotovoltaic converters
UDC
538.951, 538.956EDN
XBKOMQDOI:
10.31429/vestnik-22-3-56-61Abstract
This study investigates the photovoltaic characteristics of thermophotovoltaic (TPV) converters based on n–InAs/n–GaInPSbAs/p–GaInPSbAs heterostructures, focusing on the impact of dislocation density on their performance. The research aims to enhance the efficiency of TPV converters operating in the spectral range of 0.5–2.5 µm by employing five-component GaInPSbAs solid solutions as the active region.
The heterostructures were grown using zone recrystallization with a temperature gradient, ensuring high crystalline perfection and lattice matching with InAs substrates. Theoretical analysis included calculations of bandgap energy, lattice parameters, and spinodal decomposition regions, while experimental work involved the synthesis of epitaxial layers and characterization of their structural and optoelectronic properties.
Key findings reveal that lattice-matched GaInPSbAs layers with low dislocation densities (7·103 cm⁻2) exhibit superior photovoltaic performance, achieving an external quantum yield of 0.85, an open-circuit voltage of 0.35 V, and a fill factor of 60%. In contrast, mismatched layers with higher dislocation densities (1·105 cm⁻2) demonstrate degraded electrical characteristics. The study highlights the critical role of parameter minimizing lattices mismatch and dislocation densities to optimize TPV converter efficiency.
Keywords:
dislocation density, closed-circuit voltage, fill factor, current densityFunding information
The work was carried out within the framework of state assignments of the Federal Research Center of the Southern Scientific Center of the Russian Academy of Sciences no. 125011200142-7, as well as within the framework of the initiative research work of the Platov Polytechnical University (NPI) no. PZ-392.
References
- Andreev, V.M., Khvostikov, V.P., Larionov, V.R., Rumyantsev, V.D., Sorokina, S.V., Shvarts, M.Z., Vasil'ev, V.I., Vlasov, A.S., Tandem GaSb/InGaAsSb thermophotovoltaic cells. Proc. of the 1997 IEEE 26th Photovoltaic Specialists Conference, 1997, pp. 935–938. URL: https://www.academia.edu/51362352/Tandem_GaSb_InGaAsSb_thermophotovoltaic_cells
- Ferrari, C., Melino, S., Pinelli, M., Spina, P.R., Venturini, M., Overview and status of thermophotovoltaic systems. Energy Procedia, 2014, vol. 45, pp. 160–169. DOI: 10.1016/j.egypro.2014.01.018
- Krishtopenko, S.S., Ruffenach, S., Gonzalez-Posada, F., Boissier, G., Marcinkiewicz, M., Fadeev, M.A., Kadykov, A.M., Rumyantsev, V.V., Morozov, S.V., Gavrilenko, V.I., Consejo, C., Desrat, W., Jouault, B., Knap, W., Tournié, E., Teppe, F., Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well. Phys. Rev. B, 2018, vol. 97, no. 24, pp. 245419-1–245419-8. DOI: 10.1103/PhysRevB.97.245419
- Алфимова, Д.Л., Лунин, Л.С., Лунина, М.Л., Выращивание и свойства твердых растворов GayIn1-yPzAs1-x-zBix на подложках GaP. Неорганические материалы, 2014, т. 50, №2, с. 127–133. [Alfimova, D.L., Lunin, L.S., Lunina, M.L., Growth and properties of GayIn1-yPzAs1-x-zBix solid solutions on GaP substrates. Inorganic Materials, 2014, vol. 50, no. 2, pp. 113–119. DOI: 10.1134/S0020168514020010] DOI: 10.7868/s0002337x14020018
- Лозовский, В.Н., Лунин, Л.С., Аскарян, Т.А., Метод расчета изопараметрических составов и ширины запрещенной зоны в пятикомпонентных твердых растворах на основе соединений A3B5. Изв. вузов. Сер. физ., 1989, т. 32, №7, с. 41–47. [Lozovsky, V.N., Lunin, L.S., Askaryan, T.A., Method for calculating isoparametric compositions and band gap widths in five-component solid solutions based on A3B5 compounds. Izvestiya vuzov. Seriya fizika = Soviet Physics Journal, 1989, vol. 32, no. 7, pp. 41–47. (in Russian)]
- Лозовский, В.Н., Лунин, Л.С., Пятикомпонентные твердые растворы соединений AIIIBV (новые материалы оптоэлектроники). СКНЦ ВШ, Ростов-на-Дону, 1992. [Lozovsky, V.N., Lunin, L.S., Pyatikomponentnye tverdye rastvory soedinenij AIIIBV (novye materialy optoelektroniki) = Five-component solid solutions of III-V compounds. Rostov-on-Don, SKNC VSh, 1992. (in Russian)]
- Дейбук, В.Г., Термодинамическая устойчивость эпитаксиальных пленок GaInSb, InAsSb, GaInP. Физика и техника полупроводников, 2003, т. 37, № 10, с. 1179–1183. [Deybuk, V.G., Thermodynamic stability of epitaxial films GaInSb, InAsSb, GaInP. Fizika i tekhnika poluprovodnikov = Semiconductors, 2003, vol. 37, iss. 10, pp. 1179–1183. (in Russian)]
Downloads
Downloads
Dates
Submitted
Accepted
Published
How to Cite
License
Copyright (c) 2025 Лунина М.Л., Лунин Л.С., Донская А.В.
This work is licensed under a Creative Commons Attribution 4.0 International License.
