To the question of the formation of profiled silicon crystals at its growth by Stepanov's method

Authors

  • Onishchuk S.A. Kuban State University, Krasnodar, Российская Федерация
  • Tumaev E.N. Kuban State University, Krasnodar, Российская Федерация

UDC

548.52

Abstract

In this article the processes of formation of single crystals during its growing by Stepanov’s method are studied. This growing method consists of drawing crystals through the crystal former (shaper). The presence of a form-building agent (i.e. non-free growth of crystals) leads to increase in concentration of defects in the crystal structure, which decreases the quality of solar cells. In this regard, the article explores the question: what forms of growth arise during the growing of silicon single crystals by Stepanov’s method. Typical defects that arise when growing single crystals of silicon in the form of ribbons and pipes are considered. Experimental investigations of defects in profiled crystals have shown that the defects are characterized by the formation of twining structures, i.e. two neighboring single crystals separated by an atomic plane. The influence of the seed orientation on twining formation process is studied. In particular, the peculiar angles between the growth directions and the twins formation are found. The formation of mosaic structure which competes with the twin structure and is displaced by the latter is observed. The appearance of spiral structures during the growth of single crystals of tubular forms is also observed. To explain the features of formation we calculated (per one atom) the interaction energies of neighboring parallel atomic layers. The Lennard-Jones potential was chosen as the interaction potential. The results of the calculation showed that among the planes with small values of Miller’s indices the plane (112) possesses the smallest interaction energy. The family of planes equivalent to the (112) plane has a close orientation, and the angles between its directions are in good agreement with the angles in which direction the twins are formed. The presence of three close directions of twinning also explains the formation of spiraling structures when growing silicon single crystals with tubular cross section.

Keywords:

solar cells, profiled silicon, Stepanov's method, twinning, crystallographic planes, Miller indices

Author Infos

Sergey A. Onishchuk

канд. физ.-мат. наук, доцент кафедры общей физики и информационных систем Кубанского государственного университета

e-mail: onishchuk52@mail.ru

Evgeniy N. Tumaev

д-р физ.-мат. наук, профессор кафедры теоретической физики и компьютерных технологий Кубанского государственного университета

e-mail: tumayev@phys.kubsu.ru

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Issue

2017. No. 3

Section

Physics

Pages

84-94

Submitted

2017-06-24

Published

2017-09-30

How to Cite

Onishchuk S.A., Tumaev E.N. To the question of the formation of profiled silicon crystals at its growth by Stepanov's method. Ecological Bulletin of Research Centers of the Black Sea Economic Cooperation, 2017, no. 3, pp. 84-94. (In Russian)

Copyright (c) 2017 Onishchuk S.A., Tumaev E.N.

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